FSS234D Selling Leads, Price trend, FSS234D DataSheet download, circuit diagram from SeekIC.com

Features: 6A, 250V, rDS(ON)= 0.600UIS RatedTotal Dose -Meets Pre-RAD Specifcations to 100K RAD (Si) -Rated to 300K RAD (Si)Single Event -Safe Operating Area Curve for Single Event Effe -SEE Immunity for LET of 36MeV/mg/cm2with VDSup to 100% of Rated Breakdown and VGSof 10V Off-BiasDose Rate -Typic...

See larger image

SeekIC No. : 004344748 Detail

FSS234D: Features: 6A, 250V, rDS(ON)= 0.600UIS RatedTotal Dose -Meets Pre-RAD Specifcations to 100K RAD (Si) -Rated to 300K RAD (Si)Single Event -Safe Operating Area Curve for Single Event Effe -SEE Immunity...

FSS234D Data Sheet

Get Latest Price

Part Number:: FSS234D
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/4/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Product Details

Description

Features:

6A, 250V, r_DS(ON)= 0.600
UIS Rated
Total Dose
   -Meets Pre-RAD Specifcations to 100K RAD (Si)
   -Rated to 300K RAD (Si)
Single Event
   -Safe Operating Area Curve for Single Event Effe
   -SEE Immunity for LET of 36MeV/mg/cm² with
   V_DS up to 100% of Rated Breakdown and
   V_GSof 10V Off-Bias
Dose Rate
   -Typically Survives 3E9 RAD (Si)/s at 80% BV_DSs
-Typically Survives 2E12 if Current Limited to I_ASPhoto Current
-3.0nA Per-RAD (Si)/s Typically
Neutron
-Maintain Pre-RAD Specifcations
   for 1E13 Neutrons/cm² -Usable to 1E14 Neutrons/cm²

Specifications

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20k . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..V_DGRContinuous Drain Current
T_C = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..I_D
T_C = 100 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .   . .I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .V_GSMaximum Power Dissipation
T_C = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... .P_T
T_C = 100 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .P_T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100H (See Test Figure). . . . . . . . . . . . . . . .I_AS
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..... .I_SPulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_SMOperating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_J , T_STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)

Description

The Discrete Products Operation of Intersil Corporation FSS234D has developed a series of Radiation Hardened MOSFETs speci-cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices, FSS234D is ideally suited to harsh space environments.

The dose rate and neutron tolerance necessary for military applications have not been sacrifced. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options of FSS234D are also available.

Customers Who Bought This Item Also Bought

BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details
ARDUINO IIC/I2C 液晶模块，IGBT
US $$4.50 - 4.80 / Piece

Supply Ability:100Day

View details
DS-4008HCI English version video capture card Hai Kang
US $$120.00 - 120.00 / Piece

Supply Ability:120Week

View details
2DI300A-050 MODULE
US $$30.00 - 30.00 / Piece

Supply Ability:100Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

FSS234D

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Switches(5620)

Potentiometers, Variable Resistors(1370)

Capacitors(4587)

Tools(7611)

Relays(6300)

Circuit Protection(3850)