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FU-427SHL-8M22

Features: ·High optical output power·Emission wavelength is in 1.3mm band·MQW* active layer·FSBH** structure fabricated by all MOCVD process *Multiple quantum well **Facet selective-growth buried heterostructureApplicationOTDRSpecifications Parameter Symbol Conditions Ratings Un...

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FU-427SHL-8M22: Features: ·High optical output power·Emission wavelength is in 1.3mm band·MQW* active layer·FSBH** structure fabricated by all MOCVD process *Multiple quantum well **Facet selective-growth buried he...

FU-427SHL-8M22 Data Sheet

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Part Number:
FU-427SHL-8M22
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Upload time: 2024/4/28

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Product Details

Description



Features:

·High optical output power
·Emission wavelength is in 1.3mm band
·MQW* active layer
·FSBH** structure fabricated by all MOCVD process *Multiple quantum well **Facet selective-growth buried heterostructure


Application

OTDR


Specifications

Parameter

Symbol

Conditions

Ratings

 Unit

Laser diode

 Reverse voltage

Vrl

-

2

V

Forward current

Ifl

Pulse(Note 1)

1

A

Operating case temperature

Tc

-

-20 ~ +60

Storage temperature

Tstg

-

-40 ~ +70

Note 1. Pulse condition : Pulse width 10ms, Duty ratio 1%


Description

Module type FU-427SHL-8M22 has been developed for coupling a singlemode optical fiber and a 1.3 mm wavelength InGaAsP LD (Laser diode).

FU-427SHL-8M22 is suitable to light source for measurning instruments(especially, OTDR).


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