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FW307

Features: • The FW307 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance andhigh-speed switching, thereby enabling high-density mounting.• Excellent ON-resistance characteristic.Pinout Specifications Parameter Symbol Conditions Ratings unit ...

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SeekIC No. : 004345595 Detail

FW307: Features: • The FW307 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance andhigh-speed switching, thereby enabling high-density mounting.• Excellent O...

FW307 Data Sheet

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Part Number:
FW307
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Total Cost: $ 0.00

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Product Details

Description



Features:

• The FW307 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance andhigh-speed switching, thereby enabling high-density mounting.
• Excellent ON-resistance characteristic.






Pinout






Specifications

Parameter Symbol Conditions Ratings unit
N-channel P-channel
Drain-to-Source Voltage VDSS 250 -250 V
Gate-to-Source Voltage VGSS ±30 ±30 V
Drain Current(DC) ID 1 -0.7 A
Drain Current(Pulse) IDP PW10µS, dutycycle1% 5 -3 A
Allowable power Dissipation PD Mounted on a ceramic board (900mm2*0.8mm)1unit 1.7 W
Total Dissipation PT Mounted on a ceramic board (900mm2*0.8mm) 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg -55 to ±150 °C


Absolute maximum ratings
(Pch) VDSS [V] 250
(Pch) VGSS [V] 30
(Pch) ID [A] 0.7
(Pch) PD [W] 1.7
When mounted on ceramic substrate (1200mm²*0.8mm) 1unit
(Nch) VDSS [V] 250
(Nch) VGSS [V] 30
(Nch) ID [A] 1
(Nch) PD [W] 1.7
When mounted on ceramic substrate (1200mm²*0.8mm) 1unit
Electrical characteristics
(Pch) VGS(off) min to max [V] 1.5 to 2.5
(Pch) |yfs| typ [S] 1.1
(Pch) RDS(on)1 typ [] 3
(Pch) RDS(on)1 max [] 4
(Pch) VGS [V] 10
(Pch) ID [A] 0.7
(Pch) Ciss [pF] 160
(Nch) VGS(off) min to max [V] 1.5 to 2.5
(Nch) |yfs| typ [S] 2.1
(Nch) RDS(on)1 typ [] 1.2
(Nch) RDS(on)1 max [] 1.6
(Nch) VGS [V] 10
(Nch) ID [A] 1
(Nch) Ciss [pF] 160





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