FZ1600R17KF6C_B2

Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 125 C
Gate-Emitter Leakage Current : 400 nA
Configuration : Dual Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max : 1700 V
Package / Case : IHM
Collector-Emitter Saturation Voltage : 2.6 V
Continuous Collector Current at 25 C : 2600 A
Power Dissipation : 12.5 KW


Description

The FZ1600R17KF6C_B2 is designed as one kind of IGBT module. The electrical properties of the FZ1600R17KF6C_B2 can be summarized as:(1)collector-emitter voltage: 1700 V;(2)DC-collector current TC = 80 °C: 1600 A;(3)DC-collector current TC = 25 °C: 2600 A;(4)repetitive peak collector current: 3200 A;(5)total power dissipation: 12.5 kW;(6)gate-emitter peak voltage: +/- 20V V;(7)DC forward current: 1600 A;(8)repetitive peak forw. current: 3200 A;(9)insulation test voltage: 4 kV.

And the characteristic values of the FZ1600R17KF6C_B2 can be summarized as:(1)collector-emitter saturation voltage: 2.6 V or 3.1 V;(2)gate threshold voltage: 4.5 V to 6.5 V;(3)gate charge: 19 C;(4)input capacitance: 105 nF;(5)reverse transfer capacitance: 5.3 nF;(6)collector-emitter cut-off current: 0.04 mA or 20 mA;(7)gate-emitter leakage current: 400 nA. If you want to know more information such as the electrical characteristics about the FZ1600R17KF6C_B2, please download the datasheet in www.seekic.com or www.chinaicmart.com.