G11M02

The G11M02 is designed as one member of quickchip 7 integrated circuit arrays which typical applications include RF amplifiers and mixers, sample and hold circuits, high speed comparators, voltage-controlled oscillators, prescalers and high speed logic / interface functions.

G11M02 has eight features. The first one is 2x density improvement over SHPi (QC6). The second one is trench isolation (poly filled). The third one is fT > 12GHz at Vce = 4V, NPN. The fourth one is 200/ poly resistors. The fifth one is 4um metal pitch, 2 layers of Au. The sixth one is trimmable nichrome resistors. The seventh one is it would have low power. That are all the main features.

Some important electrical specifications of G11M02 have been concluded into several points as follow. The first one is about its collector to base breakdown voltage which would be min 12V. The second one is about its collector to emitter punch-through voltage which would be min 10V. The third one is about its collector to emitter sustaining voltage which would be min 5V. The fourth one is about its collector to emitter breakdown voltage which would be min 4V. The fifth one is about its emitter to base breakdown voltage which would be min 4V. The sixth one is about its emitter to collector punch-through voltage which would be min 1.5V. The seventh one is about its collector substrate breakdown voltage which would be min 25V. The eighth one is about its collector to collector breakdown voltage which would be min 20V. The ninth one is about its emitter to base forward voltage which would be min 0.80V and max 0.90V. The tenth one is about its collector to emitter saturation voltage which would be max 0.15V. The eleventh one is about its early voltage which would be min 15V. The twelfth one is about its collector to emitter leakage current which would be max 1nA. And so on. For more information about G11M02 please contact us.