G2N5401

Features: *Complementary to NPN Type G2N5551*High Collector-Emitter Breakdown Voltage (VCEO=150V@IC=1mA))Specifications Parameter Symbol Ratings Unit Junction Temperature TJ +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO -160 V Collector to E...

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SeekIC No. : 004346230 Detail

G2N5401: Features: *Complementary to NPN Type G2N5551*High Collector-Emitter Breakdown Voltage (VCEO=150V@IC=1mA))Specifications Parameter Symbol Ratings Unit Junction Temperature TJ +150 S...

floor Price/Ceiling Price

Part Number:
G2N5401
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

*Complementary to NPN Type G2N5551
*High Collector-Emitter Breakdown Voltage (VCEO=150V@IC=1mA))



Specifications

Parameter Symbol Ratings Unit
Junction Temperature TJ +150
Storage Temperature Tstg -55 ~ +150
Collector to Base Voltage VCBO -160 V
Collector to Emitter Voltage VCEO -150 V
Emitter to Base Voltage VEBO -5 V
Emitter to Base Voltage IC -600 mA
Emitter to Base Voltage PD 625 mW



Description

The G2N5401 is designed for general purpose applications requiring high breakdown voltages.




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