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G8050S

Features: *Collector current up to 700mA*Collector Emitter voltage up to 20V*Complementary to G8550SSpecifications Parameter Symbol Ratings Unit Junction Temperature Tj +150 °C Storage Temperature Tstg -55 ~ +150 °C Collector to Base Voltage VCBO 25 V Collector to Emit...

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G8050S: Features: *Collector current up to 700mA*Collector Emitter voltage up to 20V*Complementary to G8550SSpecifications Parameter Symbol Ratings Unit Junction Temperature Tj +150 °C Stor...

G8050S Data Sheet

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Part Number:
G8050S
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

*Collector current up to 700mA
*Collector Emitter voltage up to 20V
*Complementary to G8550S


Specifications

Parameter Symbol Ratings Unit
Junction Temperature Tj +150 °C
Storage Temperature Tstg -55 ~ +150 °C
Collector to Base Voltage VCBO 25 V
Collector to Emitter Voltage VCEO 20 V
Emitter to Base Voltage VEBO 5 V
Collector Current IC 0.7 mA
Total Power Dissipation PD 625 mW



Description

The G8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier for portable radio and general purpose applications.


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