Purchase G8370-85, In-stock G8370-85 From SeekIC.
Part Number: G8370-85
Description: InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 m, lar...
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G8370-85
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Suppliers
DataSheet
General Description
G8370-85 General Description
InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 m, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from 1 to 5 mm.
G8370-85 Features
·Low PDl (Polarization Dependence Loss)
·Low noise, low dark current
·Large active area
·Various active area sizes available
·Low noise, low dark current
·Large active area
·Various active area sizes available
G8370-85 Typical Application
·Laser monitor
·Optical power meter
· Laser diode life test
·Optical power meter
· Laser diode life test
G8338
PDF/DataSheet Download
- Datasheet: G8338
- File Size: 110839 KB
- Manufacturer: HAMAMATSU [Hamamatsu Corporation]
- Click here to Download
- ·G8338-02
- HAMAMATSU [Hamamatsu Corporation]
- InGaAs PIN photodiode with preamp
- 110839 KB
- ·G8339
- HAMAMATSU [Hamamatsu Corporation]
- InGaAs PIN photodiode with preamp
- 121392 KB
- ·G8339-21
- HAMAMATSU [Hamamatsu Corporation]
- InGaAs PIN photodiode with preamp
- 121392 KB
- ·G8339-22
- HAMAMATSU [Hamamatsu Corporation]
- InGaAs PIN photodiode with preamp
- 121392 KB
- ·G8339-23
- HAMAMATSU [Hamamatsu Corporation]
- InGaAs PIN photodiode with preamp
- 121392 KB
- ·G8339-32
- HAMAMATSU [Hamamatsu Corporation]
- InGaAs PIN photodiode with preamp
- 121392 KB
- ·G8339-44
- HAMAMATSU [Hamamatsu Corporation]
- InGaAs PIN photodiode with preamp
- 121392 KB
- ·G8340
- HAMAMATSU [Hamamatsu Corporation]
- InGaAs PIN photodiode with preamp
- 103927 KB
G8370-85 Relative Products
G8370-83
InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 m, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from 1 to 5 mm.
G8370-82
InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 m, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from 1 to 5 mm.
G8370-81
InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 m, large shunt resistance and very low noise. Hamamatsu G8370-81/-82/-83/-85 provides various types of InGaAs PIN photodiodes with active areas from 1 to 5 mm.
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