G8376 suppliers, G8376 price trend, G8376 PDF download, circuit diagram from SeekIC

Purchase G8376, In-stock G8376 From SeekIC.

Five Points

Type No.	Window material	Package	Active area (mm)	Absolute maximum ratings
				Reverse voltage VR (V)	Operating temperature Topr (°C)	Storage temperature Tstg (°C)
G8376-01	Borosilicate glass with anti-reflective coating (optimized for 1.55 m peak)	TO-18	0.04	20	-40 to +85	-55 to +125
G8376-02			0.08
G8376-03			0.3
G8376-05			0.5

Low noise, low dark current
Low terminal capacitance
3-pin TO-18 package

NIR (near infrared) photometry
Optical communication

G8376
PDF/DataSheet Download

G8373
G8372
G8370-85
InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 m, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from 1 to 5 mm.
G8370-83
InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 m, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from 1 to 5 mm.
G8370-82
InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 m, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from 1 to 5 mm.
G8370-81
InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 m, large shunt resistance and very low noise. Hamamatsu G8370-81/-82/-83/-85 provides various types of InGaAs PIN photodiodes with active areas from 1 to 5 mm.

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