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MFG:ST  D/C:1IGBT&1DIO: 100A600V  

GA100NA60U Product Image

GA1 Series Datasheet download

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Part Number: GA100NA60U

 

MFG: ST

 

D/C: 1IGBT&1DIO: 100A600V

 

Urgent Purchase

GA100NA60U Maximum Ratings

Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
600
V
IC@ TC = 25
Continuous Collector Current
100
A
IC@ TC = 100 Continuous Collector Current
50
ICM
Pulsed Collector Current
200
ILM Clamped Inductive Load Current
200
VGE
Gate-to-Emitter Voltage
±20
V
VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min
2500
PD@ TC = 25
Maximum Power Dissipation
250
W
PD@ TC = 100 Maximum Power Dissipation
100
TJ Operating Junction Temperature Range
-55 to +150
TSTG Storage Temperature Range
-55 to +125
  Mounting Torque, 6-32 or M3 Screw
12 lbf •in(1.3N•m)

GA100NA60U Features

• UltraFastTM:  Optimized for minimum saturation voltage and
  operating frequencies up to 40 kHz in hard switching, > 200 kHz in
   resonant mode
• Very low conduction and switching losses
• Fully isolated package (2,500 Volt AC/RMS)
• Very low internal inductance ( 5 nH typ.)
• Industry standard outline

GA100NA60U datasheet

GA100NA60U
PDF/DataSheet Download

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