GA100NA60UP

The GA100NA60UP is designed as one kind of insulated gate bipolar transistors (warp 2 speed IGBT) with current of 100A. GA100NA60UP is designed for increased operating efficiency in power conversion: PFC, UPS, SMPS, welding, induction heating and would be easy to assemble and parallel.

GA100NA60UP has eight features. (1)Ultrafast: optimized  for minimum saturation voltage and speed 0 to 40kHz in hard switching, > 200kHz in resonant mode. (2)Very low conduction and switching losses. (3)Fully isolated package (2500 V AC/RMS). (4)Very low internal inductance ( 5nH typical). (5)Industry standard outline. (6)UL approved file E78996. (7)Compliant to RoHS directive 2002/95/EC. (8)Designed and qualified for industrial market. Those are all the main features.

Some absolute maximum ratings of GA100NA60UP have been concluded into several points as follow. (1)Its collector to emitter breakdown voltage would be 600V. (2)Its continuous collector current would be 100A at Tc=25°C and would be 50A at Tc=100°C. (3)Its pulsed collector current would be 200A. (4)Its clamped inductive load current would be 200A. (5)Its gate to emitter voltage would be +/-20V. (6)Its RMS isolation voltage would be 2500V. (7)Its maximum power dissipation would be 250W at Tc=25°C and would be 100W at Tc=100°C. (8)Its operating junction and storage temperature range would be from -55°C to +150°C. (9)Its mounting torque would be 1.2Ibf ` in. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of GA100NA60UP are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)Its temperature coeffecient of breakdown voltage would be typ 0.36V/°C. At present we have not got so much information about this IC and we would try hard to get more information about GA100NA60UP. If you have any question or suggestion or want to know more information please contact us for details. Thank you!