Purchase GA100TS120U, In-stock GA100TS120U From SeekIC.
MFG:module Package Cooled:IR D/C:05+
- Table of contents:
GA100TS120U
-
Suppliers
DataSheet
General Description
GA100TS120U Maximum Ratings
|
Parameter |
Max. |
Units | |
|
VCES |
Collector-to-Emitter Voltage |
1200 |
V |
|
IC @ TC = 25 |
Continuous Collector Current |
100 |
A |
|
ICM |
Pulsed Collector Current➀ |
200 | |
|
ILM |
Peak Switching Current ➁ |
200 | |
|
IFM |
Peak Diode Forward Current |
200 | |
|
VGE |
Gate-to-Emitter Voltage |
± 20 |
V |
| VISOL | RMS Isolation Voltage, Any Terminal To Case, t = 1 min |
2500 | |
|
PD @ TC = 25 |
Maximum Power Dissipation |
520 |
W |
|
PD @ TC = 85 |
Maximum Power Dissipation |
270 | |
|
TJ |
Operating Junction Temperature Range |
-40 to +150 |
|
| TSTG | Storage Temperature Range |
-40 to +125 |
GA100TS120U Features
• UltraFast: Optimized for high operatingn frequencies 8-40 kHz in har
switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• Generation 4 IGBT technology
switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• Generation 4 IGBT technology
GA100TS120U
PDF/DataSheet Download
- Datasheet: GA100TS120U
- File Size: 276449 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
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