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GA100TS120U

Features: • UltraFast: Optimized for high operatingn frequencies 8-40 kHz in har switching, >200 kHz in resonant mode• Very low conduction and switching losses• HEXFRED™ antiparallel diodes with ultra- soft recovery• Industry standard package• UL approved...

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SeekIC No. : 004347060 Detail

GA100TS120U: Features: • UltraFast: Optimized for high operatingn frequencies 8-40 kHz in har switching, >200 kHz in resonant mode• Very low conduction and switching losses• HEXFRED™ ...

GA100TS120U Data Sheet

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Part Number:
GA100TS120U
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• UltraFast:  Optimized for high operatingn frequencies 8-40 kHz in har
   switching,  >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• Generation 4 IGBT technology


Specifications
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
1200
V
IC @ TC = 25
Continuous Collector Current
100
A
ICM
Pulsed Collector Current➀
200
ILM
Peak Switching Current ➁
200
IFM
 Peak Diode Forward Current
200
VGE
Gate-to-Emitter Voltage
± 20
V
VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min
2500
PD @ TC = 25
Maximum Power Dissipation
520
W
PD @ TC = 85
 Maximum Power Dissipation
270
TJ
 Operating Junction Temperature Range
-40 to +150
TSTG Storage Temperature Range
-40 to +125



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