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MFG:IR  D/C:2IGBT: 100A600V  

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Part Number: GA100TS60U

 

MFG: IR

 

D/C: 2IGBT: 100A600V

 

Urgent Purchase

GA100TS60U Maximum Ratings

Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25
Continuous Collector Current
100
A
ICM
Pulsed Collector Current
200
ILM
Clamped Inductive Load Current
200
IFM Diode Maximum Forward Current
200
VGE
Gate-to-Emitter Voltage
±20
V
VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min
2500
PD @ TC = 25
Maximum Power Dissipation
320
W
PD @ TC = 85
Maximum Power Dissipation
170
TJ
Operating Junction Temperature Range
-40 to +150
TSTG
Storage Temperature Range
-40 to +125

GA100TS60U Features

• UltraFast:  Optimized for high operating frequencies 8-40 kHz in hard
   switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL recognition pending
• Generation 4 IGBT technology

GA100TS60U datasheet

GA100TS60U
PDF/DataSheet Download

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