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MFG:N/A  Package Cooled:NA/  D/C:09+  

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Part Number: GA125TS120U

 

MFG: N/A

Package Cooled: NA/

D/C: 09+

 

Urgent Purchase

GA125TS120U Maximum Ratings

Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
1200
V
IC @ TC = 25
Continuous Collector Current
125
A
ICM
Pulsed Collector Current
250
ILM
Clamped Inductive Load Current
250
IFM Diode Maximum Forward Current
250
VGE
Gate-to-Emitter Voltage
±20
V
VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min
2500
PD @ TC = 25
Maximum Power Dissipation
625
W
PD @ TC = 85
Maximum Power Dissipation
325
TJ
Operating Junction Temperature Range
-40 to +150
TSTG
Storage Temperature Range
-40 to +125

GA125TS120U Features

• UltraFast:  Optimized for high operating frequencies 8-40 kHz in hard
   switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• Generation 4 IGBT technology

GA125TS120U datasheet

GA125TS120U
PDF/DataSheet Download

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