GA200HS60S1PbF

The GA200HS60S1PbF is designed as one kind of "half-bridge" IGBT INT-A-PAK (standard speed IGBT) with current of 200A. GA200HS60S1PbF's benefits include increased operating efficiency, direct mounting to heatsink, performance optimized as output inverter stage for TIG welding machines.

GA200HS60S1PbF has seven features. (1)Generation 4 IGBT technology. (2)Standard: optimized for hard switching speed DC to 1kHz. (3)Very low conduction losses. (4)Industry standard package. (5)UL approved file E78996. (6)Compliant to RoHS directive 2002/95/EC. (7)Designed and qualified for industrial level. Those are all the main features.

Some absolute maximum ratings of GA200HS60S1PbF have been concluded into several points as follow. (1)Its colletor to emitter voltage would be 600V. (2)Its continuous collector current would be 480A at Tc=25°C and would be 200A at Tc=116°C. (3)Its pulse collector current would be 800A. (4)ts peak switching current would be 800A. (5)Its RMS isolation voltage would be 2500V. (6)Its gate to emitter voltage would be +/-20V. (7)Its maximum power dissipation would be 830W at Tc=25°C and would be 430W at Tc=85°C. It should be noted that stresses above those values listed in the absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of GA200HS60S1PbF are concluded into several points as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)Its collector to emitter voltage would be typ 1.13V and max 1.21V at Vge=15V, Ic=200A and would be typ 1.08V and max 1.18V at Vge=15V, Ic=200A, Tj=125°C. (3)Its gate threshold voltage would be min 3V and typ 4.5V and max 6V. (4)Its collector to emitter leakage current would be typ 0.025mA and max 1mA at Vge=0, Vce=600V and would be max 10mA at Vge=0, Vce=600V, Tj=125°C. (5)Its gate to emitter leakage current would be max +/-250nA with test conditions of Vge=+/-20V. And so on. If you have any question or suggestion about GA200HS60S1PbF please contact us for details. Thank you!