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GA200NS61U

Features: Generation 4 IGBT technologyUltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVery low conduction and switching lossesHEXFRED™antiparallel diodes with ultra- soft recoveryIndustry standard packageUL approvedApplicationIncrea...

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SeekIC No. : 004347074 Detail

GA200NS61U: Features: Generation 4 IGBT technologyUltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVery low conduction and switching lossesHEXFRED͐...

GA200NS61U Data Sheet

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Part Number:
GA200NS61U
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 Generation 4 IGBT technology
 UltraFast:  Optimized for high operating  frequencies 8-40 kHz in hard switching, >200  kHz in resonant mode
 Very low conduction and switching losses
 HEXFRED™ antiparallel diodes with ultra- soft  recovery
 Industry standard package
 UL approved


Application

 Increased operating efficiency
 Direct mounting to heatsink
 Performance optimized for power conversion: UPS,  SMPS, Welding
 Lower EMI, requires less snubbing


Specifications

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC=25°C Continuous Collector Current 200 A
ICM Pulsed Collector Current 400
ILM Peak Switching Current‚ 400
IFM Peak Diode Forward Current 400
VGE Gate-to-Emitter Voltage ±20 V
VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500
PD @ TC=25°C Maximum Power Dissipation 625 W
PD @ TC=85°C Maximum Power Dissipation 325
TJ Operating Junction Temperature Range -40 to +150 °C
TSTG Storage Temperature Range -40 to +125



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