Purchase GA200TD120U, In-stock GA200TD120U From SeekIC.
MFG:TOSHIBA Package Cooled:module D/C:N/A
- Table of contents:
GA200TD120U
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Suppliers
DataSheet
General Description
GA200TD120U Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 1200 | V |
| IC @ TC=25°C | Continuous Collector Current | 200 | A |
| ICM | Pulsed Collector Current | 400 | |
| ILM | Peak Switching Current‚ | 400 | |
| IFM | Peak Diode Forward Current | 400 | |
| VGE | Gate-to-Emitter Voltage | ±20 | V |
| VISOL | RMS Isolation Voltage, Any Terminal To | 2500 | |
| PD @ TC=25°C | Maximum Power Dissipation | 1040 | W |
| PD @ TC=85°C | Maximum Power Dissipation | 540 | |
| TJ | Operating Junction Temperature Range | -40 to +150 | °C |
| TSTG | Storage Temperature Range | -40 to +125 |
GA200TD120U Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
GA200TD120U
PDF/DataSheet Download
- Datasheet: GA200TD120U
- File Size: 306853 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
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- ·GA201A
- MICROSEMI [Microsemi Corporation]
- SCRs Nanosecond Switching, Planar
- 143521 KB
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