Purchase GA200TS60U, In-stock GA200TS60U From SeekIC.
MFG:IR D/C:2IGBT: 200A600V
- Table of contents:
GA200TS60U
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Suppliers
DataSheet
General Description
GA200TS60U Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 600 | V |
| IC @ TC=25°C | Continuous Collector Current | 200 | A |
| ICM | Pulsed Collector Current | 400 | |
| ILM | Peak Switching Current‚ | 400 | |
| IFM | Peak Diode Forward Current | 400 | |
| VGE | Gate-to-Emitter Voltage | ±20 | V |
| VISOL | RMS Isolation Voltage, Any Terminal To Case, t = 1 min | 2500 | |
| PD @ TC=25°C | Maximum Power Dissipation | 625 | W |
| PD @ TC=85°C | Maximum Power Dissipation | 325 | |
| TJ | Operating Junction Temperature Range | -40 to +150 | °C |
| TSTG | Storage Temperature Range | -40 to +125 |
GA200TS60U Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
GA200TS60U Typical Application
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS, SMPS, Welding
• Lower EMI, requires less snubbing
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS, SMPS, Welding
• Lower EMI, requires less snubbing
GA200TS60U
PDF/DataSheet Download
- Datasheet: GA200TS60U
- File Size: 310850 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·GA200
- MICROSEMI [Microsemi Corporation]
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- ·GA200NS61U
- IRF [International Rectifier]
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- ·GA201A
- MICROSEMI [Microsemi Corporation]
- SCRs Nanosecond Switching, Planar
- 143521 KB
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