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- Table of contents:
GA50TS120U
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DataSheet
General Description
GA50TS120U Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Breakdown Voltage | 1200 | V |
| IC @ TC=25°C | Continuous Collector Current | 50 | A |
| ICM | Pulsed Collector Current | 100 | |
| ILM | Peak Switching Current | 100 | |
| IFM | Peak Diode Forward Current | 100 | |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| VISOL | RMS Isolation Voltage, Any Terminal to Case, t=1 min | 2500 | |
| PD @ TC=25°C | Maximum Power Dissipation | 280 | W |
| PD @ TC=85°C | Maximum Power Dissipation |
145 | |
| TJ | Operating Junction | -40 to + 150 | °C |
| TSTG | Storage Temperature Range | -40 to + 125 |
GA50TS120U Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
GA50TS120U Typical Application
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS, SMPS, Welding
• Lower EMI, requires less snubbing
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS, SMPS, Welding
• Lower EMI, requires less snubbing
GA50TS120U
PDF/DataSheet Download
- Datasheet: GA50TS120U
- File Size: 226243 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·GA500TD60U
- IRF [International Rectifier]
- HALF-BRIDGE IGBT DUAL INT-A-PAK
- 243324 KB
- ·GA50TS120K
- ETC [ETC]
- Short Circuit Rated Ultra-FastTM Speed IGBT
- 124292 KB
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