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GAL16LV8

Features: • HIGH PERFORMANCE E2CMOS® TECHNOLOGY - 3.5 ns Maximum Propagation Delay - Fmax = 250 MHz - 2.5 ns Maximum from Clock Input to Data Output - UltraMOS® Advanced CMOS Technology• 3.3V LOW VOLTAGE 16V8 ARCHITECTURE - JEDEC-Compatible 3.3V Interface Standard - 5V Compatib...

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SeekIC No. : 004347093 Detail

GAL16LV8: Features: • HIGH PERFORMANCE E2CMOS® TECHNOLOGY - 3.5 ns Maximum Propagation Delay - Fmax = 250 MHz - 2.5 ns Maximum from Clock Input to Data Output - UltraMOS® Advanced CMOS Technolog...

GAL16LV8 Data Sheet

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Part Number:
GAL16LV8
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• HIGH PERFORMANCE E2CMOS® TECHNOLOGY
   - 3.5 ns Maximum Propagation Delay
   - Fmax = 250 MHz
   - 2.5 ns Maximum from Clock Input to Data Output
   - UltraMOS® Advanced CMOS Technology
• 3.3V LOW VOLTAGE 16V8 ARCHITECTURE
   - JEDEC-Compatible 3.3V Interface Standard
   - 5V Compatible Inputs
   - I/O Interfaces with Standard 5V TTL Devices (GAL16LV8C)
• ACTIVE PULL-UPS ON ALL PINS (GAL16LV8D Only)
• E2 CELL TECHNOLOGY
   - Reconfigurable Logic
   - Reprogrammable Cells
   - 100% Tested/100% Yields
   - High Speed Electrical Erasure (<100ms)
   - 20 Year Data Retention
• EIGHT OUTPUT LOGIC MACROCELLS
   - Maximum Flexibility for Complex Logic Designs
   - Programmable Output Polarity
• PRELOAD AND POWER-ON RESET OF ALL REGISTERS
   - 100% Functional Testability
• APPLICATIONS INCLUDE:
   - Glue Logic for 3.3V Systems
   - DMA Control
   - State Machine Control
   - High Speed Graphics Processing
   - Standard Logic Speed Upgrade
• ELECTRONIC SIGNATURE FOR IDENTIFICATION


Pinout

Connection Diagram


Specifications

Supply voltage VCC ................................... 0.5 to +4.6V
Input voltage applied ................................ 0.5 to +5.6V
I/O voltage applied ................................... 0.5 to +4.6V
Off-state output voltage applied ............... 0.5 to +4.6V
Storage Temperature ................................. 65 to 150
Ambient Temperature with
   Power Applied ......................................... 55 to 125

1.Stresses above those listed under the "Absolute Maximum Ratings" may cause permanent damage to
   the device. These are stress only ratings and functional operation of the device at these or at any other
   conditions above those indicated in the operational sections of this specification is not implied (while
   programming, follow the programming specifications).




Description

The GAL16LV8D, at 3.5 ns maximum propagation delay time, provides the highest speed performance available in the PLD market. The GAL16LV8C can interface with both 3.3V and 5V signal levels. The GAL16LV8 is manufactured using Lattice Semiconductor's advanced 3.3V E2CMOS process, which combines CMOS with Electrically Erasable (E2) floating gate technology. High speed erase times (<100ms) allow the devices to be reprogrammed quickly and efficiently.

The 3.3V GAL16LV8 uses the same industry standard 16V8 architecture as its 5V counterpart and supports all architectural features such as combinatorial or registered macrocell operations.

Unique test circuitry and reprogrammable cells of GAL16LV8 allow complete AC, DC, and functional testing during manufacture. As a result, Lattice Semiconductor delivers 100% field programmability and functionality of all GAL products. In addition, 100 erase/write cycles and data retention in excess of 20 years are specified.




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