GB05XP120KTPbF

The GB05XP120KTPbF is designed as one kind of three phase inverter modules in MTP package 1200V NPT IGBT and HEXFRED diodes with current of 5A. Its benefits include optimized for inverter motor drive applications, low EMI, requires less snubbing and so on.

It has twelve features. (1)Generation 5 NPT 1200V IGBT technology. (2)HEXFRED diode with ultrasoft reverse recovery. (3)Very low conduction and switching losses. (4)Optional SMT thermistor (NTC). (5)Aluminum oxide DBC. (6)Very low stray inductance design for high speed operation. (7)Short circuit 10s. (8)Square RBSOA. (9)Operating frequencies 8 kHz to 60kHz. (10)UL approved file E78996. (11)Compliant to RoHS directive 2002/95/EC. (12)Designed and qualified for industrial level. Those are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its collector to emitter voltage would be 1200V. (2)Its continuous collector current would be 12A at Tc=25°C and would be 5A at Tc=100°C. (3)Its pulsed collector current would be 24A. (4)Its peak switching current would be 24A. (5)Its diode continuous forward current would be 5A. (6)Its peak diode forward current would be 12A. (7)Its gate to emitter voltage would be +/-20V. (8)Its RMS isolation voltage would be 2500V. (9)Its maximum power dissipation (including diode and IGBT) would be 76W at Tc=25°C and would be 31W at Tc=100°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 1200V. (2)Its temperature coefficient of V(br)ces would be typ 1.14V/°C. (3)Its gate threshold voltage would be min 4V and max 6V. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!