Purchase GE5N20V, In-stock GE5N20V From SeekIC.


Part Number: GE5N20V
Description: The GE5N20V uses advanced trench technology to provide excellent RDS(ON), rugged avalanche characteris...


Description: The GE5N20V uses advanced trench technology to provide excellent RDS(ON), rugged avalanche characteris...
The GE5N20V uses advanced trench technology to provide excellent RDS(ON), rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. This device is suitable for use as a Battery protection or in other Switching application.
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | 20 | V |
| Gate-Source Voltage | VGS | ±12 | V |
| Drain Current-Continuous @ Current-Pulsed (Note 1) |
ID | 5 | A |
| IDM | 20 | A | |
| Maximum Power Dissipation | PD | 1.5 | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to 150 |
GE570
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