Purchase GFB75N03, In-stock GFB75N03 From SeekIC.
MFG:GS D/C:02+
- Table of contents:
GFB75N03
-
Suppliers
DataSheet
General Description
GFB75N03 Maximum Ratings
|
Parameter |
Symbol |
Limit |
Unit | |
| Drain-Source Voltage |
VDS |
30 |
V | |
| Gate-Source Voltage |
VGS |
±20 | ||
| Continuous Drain Current(1) |
ID |
75 |
A | |
| Pulsed Drain Current |
IDM |
240 | ||
| Maximum Power Dissipation | TA = 25°C |
PD |
62.5 |
W |
| TA = 100°C |
25 | |||
| Operating Junction and Storage Temperature Range |
TJ,Tstg |
-55to150 |
°C | |
| Lead Temperature (1/8" from case for 5 sec.) |
TL |
275 |
°C | |
| Junction-to-Case Thermal Resistance |
RJC |
2.0 |
°C/W | |
| Junction-to-Ambient Thermal Resistance (PCB Mounted) |
RJA |
62.5 |
°C/W | |
GFB75N03 Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
• High temperature soldering in accordance with CECC802/Reflow guaranteed
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
• High temperature soldering in accordance with CECC802/Reflow guaranteed
GFB75N03
PDF/DataSheet Download
- Datasheet: GFB75N03
- File Size: 84824 KB
- Manufacturer: General Semiconductor Inc
- Click here to Download
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