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Part Number: GLT5160L16

 

 

 

 

Description: The GLT5160L16 is a 2-bank x 524288-word x 16-bit Synchro-nous DRAM, with LVTTL interface. All inputs ...


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GLT5160L16 General Description


The GLT5160L16 is a 2-bank x 524288-word x 16-bit Synchro-nous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The GLT5160L16 achieves very high speed data rate up to 166 MHz, and is suitablefor main memory or graphic memory in computer systems. 

GLT5160L16 Maximum Ratings

Symbol

Parameter

Conditions

Ratings

Unit

VDD

Supply Voltage

with respect to VSS

-1.0 to 4.6

V

VDDQ

Supply Voltage for Output

with respect to VSSQ

-1.0 to 4.6

V

VI

Input Voltage

with respect to VSS

-1.0 to 4.6

V

VO

Output Voltage

with respect to VSSQ

-1.0 to 4.6

V

IO

Output Current

 

50

mA

PD

Power Dissipation

TA= 25 °C

1000

mW

TOPR

Operating Temperature

comsumer

0 to 70

°C

Industrial

-40 to 85

°C

TSTG

Storage Temperature

 

-65 to 150

°C

GLT5160L16 Features

*Single 3.3 V ±0.3 V power supply
*Clock frequency 100 MHz / 125 MHz / 143 MHz/166 MHz
*Fully synchronous operation referenced to clock rising edge
*Dual bank operation controlled by BA (Bank Address)
*CAS latency- 2 / 3 (programmable)
*Burst length- 1 / 2 / 4 / 8 & Full Page (programmable)
*Burst type- sequential / interleave (programmable)
*Industrial grade available
*Byte control by DQMU and DQML
*Column access - random
*Auto precharge / All bank precharge controlled by A[10]
*Auto refresh and Self refresh
*4096 refresh cycles / 64 ms
*LVTTL Interface
*400-mil, 50-Pin Thin Small Outline Package (TSOP II) with 0.8 mm lead pitch
*60-Ball, 6.4mmx10.1mm VFBGA package with 0.65mm Ball pitch & 0.35mm Ball diameter.

GLT5160L16 Connection Diagram

GLT5160L16  Connection Diagram

GLT5160L16 datasheet

GLT5160L16-6FJ
PDF/DataSheet Download

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