GM71C4256BL

The GM71C4256BL is desined as the new generation dynamic RAM organized 262,144 x4 bit. It has realized high density, higher performance and various functions by utilizing advanced CMOS process technology. It offers fast page mode as a high speed access mode. Multiplexed address inputs permit it to be packaged in a standard 20 pin DIP, SOJ and ZIP.

It has ten features. (1)262,144 words x4 bit organized. (2)Fast page mode capability. (3)Single power supply 5V +/-10%. (4)Fast access time & cycle time. (5)low power active would be 495mW max and standby would be 5.5mW max for CMOS level and 1.1mW for L series. (6)RAS only refresh, CAS before RAS refresh, hidden refresh capability. (7)All inputs and outputs TTL compatible. (8)512 refresh cycle/8ms. (9)512 refresh cycles/64ms L series. (10)Battery back up operation L series. Those are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its ambient temperature under bias would be from 0°C to 70°C. (2)Its storage temperature plastic would be from -55°C to 125°C. (3)Its voltage on any pin relative to Vss would be from -1.0V and max 7.0V. (4)Its voltage on Vcc relative to Vss would be from -1.0V and max 7.0V. (5)Its short circuit output current would be 50mA. (6)Its power dissipation would be 1.0W. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics are concluded as follow. (1)Its output high level voltage would be min 2.4V and max Vcc. (2)Its output low level voltage would be min 0V and max 0.4V. (3)Its operating current would be 90mA for 60ns and 80mA for 70ns and 70mA for 80mA. (4)Its standby current TTL would be max 2mA. (5)Its standby current CMOS would be max 1mA. (6)Its battery back up current would be max 300uA. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!