GMV9822

Features:

·Constant Gamma of 1.0 and 1.25
·Highly Linear Frequency Tuning
·Constant Modulation Sensitivity
·Lower Series Resistance and Higher Q in Comparison to Equivalent Silicon Hyperabrupt Varactors


Specifications

Characteristic	Value
Reverse Voltage (VR)	18 V
Forward Current (IF)	100 mA
Power Dissipation at 25	250 mW
Operating Temperature (TOP)	-55 to +150
Storage Temperature (TST)	-65 to +200

Description

GaAs hyperabrupt varactor diodes of GMV9822 features a constant gamma of 1.0 and 1.25, which allows for a relatively linear frequency tuning for VCOs, modulators and tunable filters. Varactors in this series are grown by MBE (Molecular Beam Epitaxy), which allows monolayer  control of the doping profile.This translates to superb waferto- wafer uniformity. The GMV9822 resistance is lower, and Q is higher when compared to an equivalent silicon hyperabrupt varactor. GMV9822 are suited for applications at X band frequencies and above, where wide change in frequency is desired. However, in certain applications the GaAs hyperabrupt varactor exhibits a higher surface noise in comparison to an equivalent silicon varactor.