GP1S95J0000F

Optical Switches, Transmissive, with Phototransistor Output Photointerrupter deep/width gap 1.6mm

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SeekIC No. : 0086610 Detail

GP1S95J0000F: Optical Switches, Transmissive, with Phototransistor Output Photointerrupter deep/width gap 1.6mm

floor Price/Ceiling Price

Part Number:
GP1S95J0000F
Mfg:
Sharp Microelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description

Series: -
Sensing Method: Transmissive
Output Configuration: Phototransistor
Current - Collector (Ic) (Max): 20mA
Mounting Type: Through Hole
Package / Case: PCB Mount
Packaging: Tube
Current - DC Forward (If): 50mA
Voltage - Collector Emitter Breakdown (Max): 35V
Response Time: 35µs, 35µs
Manufacturer: Sharp Microelectronics
Sensing Distance: 0.063" (1.6mm)


Features:

1. Transmissive with phototransistor output
2. Highlights :
• Compact Size
• Deep Gap (Gap depth : 3.3mm)
• Thin emitter and detector molding
3. Key Parameters :
• Gap Width : 1.6mm
• Slit Width (detector side): 0.3mm
• Package : 3.6×3.4×4.7mm
4. Lead free and RoHS directive compliant



Application

1. General purpose detection of object presence or motion.
2. Example : printer, lens control for camera



Specifications

Parameter Symbol Rating Unit
Input Forward current

Reverse voltage

Power dissipation
IF

VR

P
50

6

75
mA

V

mW
Output Collector-emitter voltage

Emitter-collector voltage

Collector current

Collector power dissipation
VCEO

VECO

IC

PC
35

6

20

75
V

V

mA

mW
Total power dissipation

Operating temperature

Storage temperature

*1Soldering temperature

Ptot

Topr

Tstg

Tsol

100

-25 to +85

-40 to +100

260
mW






*1 For 5s or less



Description

GP1S95J0000F is a compact-package, phototransistor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides noncontact sensing. The compact package series of GP1S95J0000F is a result of unique technology combing transfer and injection molding.

GP1S95J0000F has a thin emitter and detector molding.




Parameters:

Technical/Catalog InformationGP1S95J0000F
VendorSharp Microelectronics
CategorySensors, Transducers
Sensing Distance0.063" (1.6mm)
Sensing MethodTransmissive
Voltage - Collector Emitter Breakdown (Max)35V
Current - Collector (Ic) (Max)20mA
Current - DC Forward (If)50mA
Output ConfigurationPhototransistor
Response Time35s , 35s <!--35us-->
TypeUnamplified
Mounting TypeThrough Hole
Package / CasePCB Mount
PackagingBulk
Operating Temperature-25°C ~ 85°C
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names GP1S95J0000F
GP1S95J0000F
425 1978 5 ND
42519785ND
425-1978-5



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