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Part Number: GP200MLS12

 

 

 

 

Description: The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages...


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GP200MLS12 General Description


The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A.

The GP200MLS12 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the lower arm of the bridge controlled. The module incoporates high current rated freewheel diodes. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.

The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

GP200MLS12 Maximum Ratings

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Tcase = 25°C unless stated otherwise

Symbol
Parameter
Conditions
Ratings
Unit
VCES Collector-emitter voltage
VGE = 0V
1200
V
VGES Gate-emitter voltage

 

±20
V
IC Collector current
DC, Tcase = 72°C
200
A
IC(PK) Peak collector current
1ms, Tcase = 72°C
400
A
Pmax Max. transistor power dissipation
Tcase = 25°C, Tj = 150°C
1490
W
Visol Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2500
V

GP200MLS12 Features

·Internally Configured With Lower Arm Controlled
·Non Punch Through Silicon
·Isolated Copper Baseplate
·Low Inductance Internal Construction

GP200MLS12 Typical Application

·High Power Choppers
·Motor Controllers
·Induction Heating
·Resonant Converters
·Power Supplies

GP200MLS12 datasheet

GP200MLS12
PDF/DataSheet Download

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