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Part Number: GP2401ESM18
Description: The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V t...
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GP2401ESM18
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DataSheet
General Description
GP2401ESM18 General Description
The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A.
The GP2401ESM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
GP2401ESM18 Maximum Ratings
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25°C unless stated otherwise
|
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
| VCES | Collector-emitter voltage |
VGE = 0V |
1800 |
V |
| VGES | Gate-emitter voltage |
±20 |
V | |
| IC | Continuous collector current |
Tcase = 80°CforTj = 150°C |
2400 |
A |
| IC(PK) | Peak collector current |
1ms, Tcase = 115°C |
4800 |
A |
| Pmax | Max. transistor power dissipation |
Tcase = 25°C, Tj = 150°C |
20.8 |
KW |
| Visol | Isolation voltage |
Commoned terminals to base plate. AC RMS, 1 min, 50Hz |
4000 |
°C |
GP2401ESM18 Features
·Low VCE(SAT)
·High Thermal Cycling Capability
·Non Punch Through Silicon
·Isolated MMC Base with AlN Substrates
·High Thermal Cycling Capability
·Non Punch Through Silicon
·Isolated MMC Base with AlN Substrates
GP2401ESM18 Typical Application
·High Reliability Inverters
·Motor Controllers
·Traction Drives
·Low-Loss System Retrofits
·Motor Controllers
·Traction Drives
·Low-Loss System Retrofits
GP2401ESM18
PDF/DataSheet Download
- Datasheet: GP2401ESM18
- File Size: 156655 KB
- Manufacturer: DYNEX [Dynex Semiconductor]
- Click here to Download
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