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Part Number: GP250MHB06S

 

 

 

 

Description: The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages f...


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GP250MHB06S General Description


The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A.

The GP250MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion.

The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.

These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

Typical applications include dc motor drives, ac pwm drivesand ups systems.

GP250MHB06S Maximum Ratings

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Tcase = 25°C unless stated otherwise

Symbol
Parameter
Test Conditions
Max.
Units
VCES Collector-emitter voltage
VGE = 0V
600
V
VGES Gate-emitter voltage
-
±20
V
IC Continuous collector
DC, Tcase =25°C
350
A
DC, Tcase = 25°C
250
A
IC(PK) 1ms, Tcase = 25°C
700
A
1ms, Tcase = 75°C
500
A
Pmax Max. power dissipation
(Transistor)
1250
W
Visol Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2500
V

GP250MHB06S Features

·n - Channel
·High Switching Speed
·Low Forward Voltage Drop
·Isolated Base

GP250MHB06S Typical Application

·PWM Motor Control
·UPS

GP250MHB06S datasheet

GP250MHB06S
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