GP2S40

Series: -
Sensing Method: Reflective
Current - DC Forward (If): 50mA
Output Type: Phototransistor
Mounting Type: Through Hole
Package / Case: PCB Mount
Packaging: Bulk
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 35V
Manufacturer: Sharp Microelectronics
Response Time: 50µs, 50µs
Sensing Distance: 0.256" (6.5mm)


Features:

·Ultra compact DIP package ( Volume: 1/3 of GP2S05)
·Long focal distance type ( focal distance: 3mm )
·Effective detection distance: 1.5 to 6.5mm


Application

·Copiers
·Facsimiles
·Printers


Specifications

Parameter		Symbol	Rating	Unit
Input	Forward current	IF	50	mA
	Reverse voltage	VR	6	V
	Power dissipation	P	75	mW
Output	Collector-emitter voltage	VCEO	35	V
	Emitter-collector voltage	VECO	6	V
	Collector current	IC	20	mA
	Collector power dissipation	PC	75	mW
Total power dissipation		Ptot	100	mW
Operating temperature		Topr	- 25 to + 85	°C
Storage temperature		Tstg	- 40 to + 100	°C
*1 Soldering temperature		Tsol	260	°C

*1 For 5 seconds


Parameters:

Technical/Catalog Information	GP2S40
Vendor	Sharp Microelectronics
Category	Sensors, Transducers
Sensing Distance	0.256" (6.5mm)
Sensing Method	Reflective
Output Type	Phototransistor
Voltage - Collector Emitter Breakdown (Max)	35V
Current - Collector (Ic) (Max)	20mA
Current - DC Forward (If)	50mA
Response Time	50s , 50s <!--50us-->
Operating Temperature	-25°C ~ 85°C
Features	Compact Model
Mounting Type	Through Hole
Package / Case	PCB Mount
Packaging	Bulk
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	GP2S40 GP2S40 425 1096 5 ND 42510965ND 425-1096-5