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Part Number: GP400LSS18

 

 

 

 

Description: The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages...


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GP400LSS18 General Description


The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.

The GP400LSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.

The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

GP400LSS18 Maximum Ratings

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25°C unless stated otherwise

Symbol
Parameter
Test Conditions
Max.
Unit
VCES Collector-emitter voltage
VGE = 0V
1800
V
VGES Gate-emitter voltage

 

±20
V
IC Collector current
DC,Tcase =75 °C
400
A
IC(PK) Peak collector current
1ms, Tcase =80°C
800
A
Pmax Max. transistor power dissipation
Tcase = 25°C (Transistor),Tj = 150°C
2980
W
Visol Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2500
V

GP400LSS18 Features

· Non Punch Through Silicon
· Isolated Copper Baseplate
· Low Inductance Internal Construction
· 400A Per Module

GP400LSS18 Typical Application

·High Power Inverters
·Motor Controllers
·Induction Heating
·Resonant Converters

GP400LSS18 datasheet

GP400LSS18
PDF/DataSheet Download

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