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Part Number: GP401LSS18
Description: The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) mod...
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GP401LSS18
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DataSheet
General Description
GP401LSS18 General Description
The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry.
Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.
The powerline range of high power modules includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands.
Typical applications include dc motor drives, ac pwm drives, main traction drives and auxiliaries, large ups systems and resonant inverters.
GP401LSS18 Maximum Ratings
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
Tcase = 25°C unless stated otherwise.
|
Symbol |
Parameter |
Test Conditions |
Max. |
Unit |
| VCES | Collector-emitter voltage |
VGE = 0V |
1800 |
V |
| VGES | Gate-emitter voltage |
|
±20 |
V |
| IC | Continuous collector current |
DC,Tcase = 25 °C |
600 |
A |
| IC(PK) | Peak collector current |
DC,Tcase = 70 °C |
400 |
A |
| 1ms, Tcase = 80°C(Transistor) |
800 |
A | ||
| Pmax | Max. transistor power dissipation |
Tcase = 25°C, (Transistor) |
2980 |
W |
| Visol | Isolation voltage |
Commoned terminals to base plate. AC RMS, 1 min, 50Hz |
4000 |
V |
GP401LSS18 Typical Application
·High Power Switching
·Motor Control
·Inverters
·Traction Systems
·Lower Loss Systems Retrofits
·Motor Control
·Inverters
·Traction Systems
·Lower Loss Systems Retrofits
GP401LSS18
PDF/DataSheet Download
- Datasheet: GP401LSS18
- File Size: 112132 KB
- Manufacturer: DYNEX [Dynex Semiconductor]
- Click here to Download
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