GS1M

RECTIFIER 1000V 1AMP SMD SMA

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SeekIC No. : 003429094 Detail

GS1M: RECTIFIER 1000V 1AMP SMD SMA

floor Price/Ceiling Price

Part Number:
GS1M
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Series: - Manufacturer: Micro Commercial Co
Frequency : 24 GHz Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V (1kV) Current - Average Rectified (Io): 1A
Current - Average Rectified (Io) (per Diode): - Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Diode Configuration: - Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA Supplier Device Package: SMA    

Description

Series: -
Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Diode Configuration: -
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Voltage - DC Reverse (Vr) (Max): 1000V (1kV)
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Package / Case: DO-214AC, SMA
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Manufacturer: Micro Commercial Co
Supplier Device Package: SMA


Features:

· Glass Passivated Die Construction
· Ideally Suited for Automatic Assembly
· Low Forward Voltage Drop
· Surge Overload Rating to 30A Peak
· Low Power Loss
· Built-in Strain Relief
· Plastic Case Material has UL Flammability Classification Rating 94V-O





Specifications

Characteristics Symbol GS1A GS1B GS1D GS1G GS1J GS1K GS1M UNIT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50 100 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current @TC = 100°C
(Note 1)
Io 1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM 30 A
Forward Voltage @IF = 1.0A VFM 1.10 V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @TA = 125°C
IRM 5.0
200
A

Reverse Recovery Time (Note 1) trr 2.5 nS
Typical Junction Capacitance (Note 2) Cj 15 pF
Typical Thermal Resistance (Note 3) RJL 30 °C/W
Operating Temperature Range Tj -65 to +175
Storage Temperature Range TSTG -65 to +175
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.





Parameters:

Technical/Catalog InformationGS1M
VendorMicro Commercial Co
CategoryDiscrete Semiconductor Products
Diode Type Standard
Voltage - DC Reverse (Vr) (Max)1000V (1kV)
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.1V @ 1A
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10A @ 1000V
SpeedStandard Recovery >500ns, > 200mA (Io)
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
PackagingTape & Reel (TR)
Capacitance @ Vr, F-
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names GS1M
GS1M



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