GS8322ZV18(B/E)

Features: • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs• 1.8 V +10%/10% core power supply• 1.8 V I/O supply• User-configurab...

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SeekIC No. : 004356011 Detail

GS8322ZV18(B/E): Features: • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT...

floor Price/Ceiling Price

Part Number:
GS8322ZV18(B/E)
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Features:

• NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs
• 1.8 V +10%/10% core power supply
• 1.8 V I/O supply
• User-configurable Pipeline and Flow Through mode
• ZQ mode pin for user-selectable high/low output drive
• IEEE 1149.1 JTAG-compatible Boundary Scan
LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2Mb, 4Mb, 8Mb, and 16Mb devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 119-, 165- or 209-Bump BGA package
• Pb-Free packages available



Specifications

Symbol Description Value Unit
VDD Voltage on VDD Pins 0.5 to 3.6 V
VDDQ Voltage in VDDQ Pins 0.5 to 3.6 V
VI/O Voltage on I/O Pins 0.5 to VDDQ +0.5 ( 3.6 V max.) V
VIN Voltage on Other Input Pins 0.5 to VDD +0.5 ( 3.6 V max.) V
IIN Input Current on Any Pin +/20 mA
IOUT Output Current on Any I/O Pin +/20 mA
PD Package Power Dissipation 1.5 W
TSTG Storage Temperature 55 to 125 °C
TBIAS Temperature Under Bias 55 to 125 °C
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.



Description

The GS8322ZV18/36/72 is a 36Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the GS8322ZV18/36/72 is switched from read to write cycles.
Because GS8322ZV18/36/72 is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs of GS8322ZV18/36/72 include the Sleep mode enable (ZZ) and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. GS8322ZV18/36/72 feature eliminates complex off-chip write pulse generation required by asynchronous SRAMs and simplifies input signal timing.
The GS8322ZV18/36/72 may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the rising-edge-triggered registers that capture input signals, the GS8322ZV18/36/72 incorporates a rising edge triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge-triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock.
The GS8322ZV18/36/72 is implemented with GSI's high performance CMOS technology and is available in a JEDEC-standard 119-bump, 165-bump or 209-bump BGA package.




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