Purchase GS8342T08, In-stock GS8342T08 From SeekIC.
Part Number: GS8342T08
Description: The GS8342T08/09/18/36E are built in compliance with the SigmaCIO DDR-II SRAM pinout standard for Comm...
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GS8342T08
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DataSheet
General Description
GS8342T08 General Description
The GS8342T08/09/18/36E are built in compliance with the SigmaCIO DDR-II SRAM pinout standard for Common I/O synchronous SRAMs. They are 37,748,736-bit (36Mb) SRAMs. The GS8342T08/09/18/36E SigmaCIO SRAMs are just one element in a family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.
GS8342T08 Maximum Ratings
| Symbol | Description | Value | Unit |
| VDD VDDQ VREF VI/O VIN IIN IOUT TJ TSTG |
Voltage on VDD Pins Voltage in VDDQ Pins Voltage in VREF Pins Voltage on I/O Pins Voltage on Other Input Pins Input Current on Any Pin Output Current on Any I/O Pin Maximum Junction Temperature Storage Temperature |
0.5 to 2.9 0.5 to VDD 0.5 to VDDQ 0.5 to VDDQ +0.5 ( 2.9 V max.) 0.5 to VDDQ +0.5 ( 2.9 V max.) +/100 +/100 125 55 to 125 |
V V V V V mA dc mA dc °C °C |
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect reliability of this component.
GS8342T08 Features
• Simultaneous Read and Write SigmaCIO™ Interface
• Common I/O bus
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write (x36 and x18) and Nybble Write (x8) function
• Burst of 2 Read and Write
• 1.8 V +100/100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
• Pin-compatible with present 9Mb and 18Mb and future 72Mb and 144Mb devices
• Common I/O bus
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write (x36 and x18) and Nybble Write (x8) function
• Burst of 2 Read and Write
• 1.8 V +100/100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
• Pin-compatible with present 9Mb and 18Mb and future 72Mb and 144Mb devices
GS8342T08E-167
PDF/DataSheet Download
- Datasheet: GS8342T08E-167
- File Size: 1624408 KB
- Manufacturer: GSI [GSI Technology]
- Click here to Download
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GS8342T08 Relative Products
GS8342S36A
GS8342S18A
GS8342S09A
GS8342S08A
GS8342S08
GS8342S08/09/18/36 are built in compliance with the SigmaSIO-II SRAM pinout standard for Separate I/O synchronous SRAMs. They are 37,748,736-bit (36Mb) SRAMs. GS8342S08/09/18/36 are the first in a family of wide, very low voltage HSTL I/O SRAMs designed to o...
GS8342R36A
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