Features: • FT pin for user-configurable flow through or pipeline operation
• Single/Dual Cycle Deselect selectable
• IEEE 1149.1 JTAG-compatible Boundary Scan
• ZQ mode pin for user-selectable high/low output drive
• 1.8 V +10%/10% core power supply and I/O
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to SCD x18/x36 Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 119-, 165-, and 209-bump BGA packageApplicationThe GS8644V18/36/72 is a 75,497,472-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
Specifications
| Symbol |
Description |
Value |
Unit |
| VDD |
Voltage on VDD Pins |
0.5 to 3.6 |
V |
| VDDQ |
Voltage in VDDQ Pins |
0.5 to 3.6 |
V |
| V I/O |
Voltage on I/O Pins |
0.5 to VDDQ +0.5 ( 3.6 V max.) |
V |
| VIN |
Voltage on Other Input Pins |
0.5 to VDD +0.5 ( 3.6 V max.) |
V |
| IIN |
Input Current on Any Pin |
+/20 |
mA |
| IOUT |
Output Current on Any I/O Pin |
+/20 |
mA |
| PD |
Package Power Dissipation |
1.5 |
W |
| TSTG |
Storage Temperature |
55 to 125 |
oC |
| TBIAS |
Temperature Under Bias |
55 to 125 |
oC |
DescriptionThe GS8644V18/36/72 is a 75,497,472-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the GS8644V18/36/72 now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
Addresses, data I/Os, chip enable (E1), address burst control inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW, GW) are synchronous and are controlled by a positive-edgetriggered clock input (CK). Output of GS8644V18/36/72 enable (G) and power down control (ZZ) are asynchronous inputs. Burst cycles can be initiated with either ADSP or ADSC inputs. In Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address counter of GS8644V18/36/72 may be configured to count in either linear or interleave order with the Linear Burst Order (LBO) input. The Burst function of GS8644V18/36/72 need not be used. New addresses can be loaded on every cycle with no degradation of chip performance.
The function of the Data Output register GS8644V18/36/72 can be controlled by the user via the FT mode . Holding the FT mode pin low places the RAM in Flow Through mode, causing output data to bypass the Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the rising-edge-triggered Data Output
Register.
The GS8644V18/36/72 is a SCD (Single Cycle Deselect) and DCD (Dual Cycle Deselect) pipelined synchronous SRAM. DCD SRAMs pipeline disable commands to the same degree as read commands. SCD SRAMs pipeline deselect commands one stage less than read commands. SCD RAMs GS8644V18/36/72 begin turning off their outputs immediately after the deselect command has been captured in the input registers. DCD RAMs hold the deselect command for one full cycle and then begin turning off their outputs just after the second rising edge of clock. The user may configure this SRAM for either mode of operation using the SCD mode input.
Byte write operation of GS8644V18/36/72 is performed by using Byte Write enable (BW) input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for writing all bytes at one time, regardless of the Byte Write control inputs.
The ZQ pin of GS8644V18/36/72 allows selection between high drive strength (ZQ low)
for multi-drop bus applications and normal drive strength (ZQ
floating or high) point-to-point applications. See the Output Driver
Characteristics chart for details.
Low power (Sleep mode) is attained through the assertion (High)
of the ZZ signal, or by stopping the clock (CK). Memory data is
retained during Sleep mode.
he GS8644V18/36/72 operates on a 2.5 V or 3.3 V power
supply. All input are 3.3 V and 2.5 V compatible. Separate output
power (VDDQ) pins are used to decouple output noise from the
internal circuits and are 3.3 V and 2.5 V compatible.
GS8644V18B Data Sheet
