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Part Number: GS881Z18B(T/D)

 

 

 

 

Description: The GS881Z18B(T/D)/GS881Z32B(T/D)/GS881Z36B(T/D) is a 9Mbit Synchronous Static SRAM. GSI's NBT SRAMs, ...


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GS881Z18B(T/D) General Description


The GS881Z18B(T/D)/GS881Z32B(T/D)/GS881Z36B(T/D) is a 9Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.

Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable, ZZ and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time.

Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-chip write pulse generation required by asynchronous SRAMs and simplifies input signal timing.

The GS881Z18B(T/D)/GS881Z32B(T/D)/GS881Z36B(T/D)  may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the rising-edge-triggered registers that capture input signals, the device incorporates a rising-edge-triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock.

The GS881Z18B(T/D)/GS881Z32B(T/D)/GS881Z36B(T/D) is implemented with GSI's high performance CMOS technology and is available in a JEDEC-standard 100-pin TQFP package.

GS881Z18B(T/D) Maximum Ratings

Symbol Description Value Unit
VDD Voltage on VDD Pins 0.5 to 4.6 V
VDDQ Voltage in VDDQ Pins 0.5 to 4.6 V
VI/O Voltage on I/O Pins 0.5 to VDDQ +0.5 ( 4.6 V max.) V
VIN Voltage on Other Input Pins 0.5 to VDDQ +0.5 ( 4.6 V max.) V
IIN Input Current on Any Pin +/20 mA
IOUT Output Current on Any I/O Pin +/20 mA
PD Package Power Dissipation 1.5 W
TSTG Storage Temperature 55 to 125
TBIAS Temperature Under Bias 55 to 125

Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component. 

GS881Z18B(T/D) Features

• User-configurable Pipeline and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization
• Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs
• IEEE 1149.1 JTAG-compatible Boundary Scan
• On-chip write parity checking; even or odd selectable
• 2.5 V or 3.3 V +10%/10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2M, 4M, and 18M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ pin for automatic power-down
• JEDEC-standard  packages
• Pb-Free 100-lead TQFP package available

GS881Z18B(T/D) Connection Diagram

GS881Z18B(T/D)  Connection Diagram

GS881Z18B(T/D) datasheet

GS809C
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