Position: Home > Datasheet list > GS8 Series > Index G > GS881Z18T
Electronica China

Purchase GS881Z18T, In-stock GS881Z18T From SeekIC.

 

GS881Z18T Product Image

GS8 Series Datasheet download

Five Points

Part Number: GS881Z18T

 

 

 

 

Description: The GS881Z18/32/36B(T/D)-xxxV is a 9Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipel...


Urgent Purchase

GS881Z18T General Description


The GS881Z18/32/36B(T/D)-xxxV is a 9Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.

Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable, ZZ and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-chip write pulse generation required by asynchronous SRAMs and simplifies input signal timing.

The GS881Z18/32/36B(T/D)-xxxV may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the rising-edge-triggered registers that capture input signals, the device incorporates a rising-edge-triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock.

The GS881Z18/32/36B(T/D)-xxxV is implemented with GSI's high performance CMOS technology and is available in JEDEC-standard 100-pin TQFP and 165-bump BGA packages.

GS881Z18T Maximum Ratings

Symbol Description Value Unit
VDD Voltage on VDD Pins 0.5 to 4.6 V
VDDQ Voltage in VDDQPins 0.5 to 4.6 V
VI/O Voltage on I/O Pins 0.5 to VDDQ+0.5 ( 4.6 V max.) V
VIN Voltage on Other Input Pins 0.5 to VDD +0.5 ( 4.6 V max.) V
IIN Input Current on Any Pin +/20 mA
IOUT Output Current on Any I/O Pin +/20 mA
PD Package Power Dissipation 1.5 W
TSTG Storage Temperature 55 to 125
TBIAS Temperature Under Bias 55 to 125
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.

GS881Z18T Features

• User-configurable Pipeline and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization
• Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs
• IEEE 1149.1 JTAG-compatible Boundary Scan
• On-chip write parity checking; even or odd selectable
• 1.8 V or 2.5 V core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2M, 4M, and 18M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ pin for automatic power-down
• JEDEC-standard packages
• RoHS-compliant 100-lead TQFP and 165-bump BGA packages available

GS881Z18T Connection Diagram

GS881Z18T  Connection Diagram

GS881Z18T datasheet

GS809C
PDF/DataSheet Download

Find GS881Z18T Suppliers

  • ·GS810C
  • VISAY [Vishay Siliconix] 
  • Microprocessor Reset Monitors 
  • 46098 KB
  • GS810C Datasheet Download
  • ·GS816018
  • ETC [ETC] 
  • 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 
  • 829559 KB
  • GS816018 Datasheet Download
  • ·GS816018BT-150
  • GSI [GSI Technology] 
  • 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 
  • 947964 KB
  • GS816018BT-150 Datasheet Download
  • ·GS816018CT-250
  • GSI [GSI Technology] 
  • 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 
  • 581159 KB
  • GS816018CT-250 Datasheet Download
  • ·GS816018CT-250I
  • GSI [GSI Technology] 
  • 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 
  • 581159 KB
  • GS816018CT-250I Datasheet Download
  • ·GS816018CT-250IT
  • GSI [GSI Technology] 
  • 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 
  • 581159 KB
  • GS816018CT-250IT Datasheet Download
  • ·GS816018CT-250T
  • GSI [GSI Technology] 
  • 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 
  • 581159 KB
  • GS816018CT-250T Datasheet Download
  • ·GS816018T-133
  • ETC [ETC] 
  • 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 
  • 829559 KB
  • GS816018T-133 Datasheet Download

GS881Z18T Relative Products

  • GS881Z18D

    GS881Z18D

    The GS881Z18/32/36B(T/D)-xxxV is a 9Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating t...

  • GS881Z18C-xxxV

    GS881Z18C-xxxV

  • GS881Z18C

    GS881Z18C

  • GS881Z18B-xxxV

    GS881Z18B-xxxV

  • GS881Z18BT-300

    GS881Z18BT-300

    The GS881Z18BT-300 is a 9Mbit synchronous static SRAM,GSI's NBT SRAMs,like ZBT,NtRAM,NoBL or other pipelined read/double late write or flow through read/single late wire SRAMs,allow utilization of all available bus bandwidth by eliminating the need to insert...

  • GS881Z18B(T/D)

    GS881Z18B(T/D)

    The GS881Z18B(T/D)/GS881Z32B(T/D)/GS881Z36B(T/D) is a 9Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwid...

Hotspot Suppliers Product

  • Models: IP2022PQ80-120
Price: 1-1 USD

    IP2022PQ80-120

    Price: 1-1 USD

    IP2000 Family Processor, Speed 160 MHZ, 20kB SRAM data

  • Models: B82498B3829M000
Price: 0.01-0.05 USD

    B82498B3829M000

    Price: 0.01-0.05 USD

    SMT inductor, High Q factor, B82498B3829M000

  • Models: SM8S36A-E3-2D
Price: 1.2-4 USD

    SM8S36A-E3-2D

    Price: 1.2-4 USD

    DO-218, uppressor, 700A

  • Models: M38184MA-312FP
Price: 2-5 USD

    M38184MA-312FP

    Price: 2-5 USD

    8-bit microcomputer, QFP, 740 family core technology, -0.3 to 7.0V, 600mw

  • Models: SLA4060
Price: 0.8-1.2 USD

    SLA4060

    Price: 0.8-1.2 USD

    NPN darlington general purpose, ZIP12, 120 V, 5 A, 25 W, 10 μA, 5.5 μs

  • Models: G2R-1-E
Price: 0.5-2 USD

    G2R-1-E

    Price: 0.5-2 USD

    power relay, High-sensitivity (360 mW), high-capacity (16 A)

  • Models: LT1413CS8
Price: 0.15-0.85 USD

    LT1413CS8

    Price: 0.15-0.85 USD

    Op Amp, SOP-8, ±22V

  • Models: FP15R12KE3G
Price: 37-55 USD

    FP15R12KE3G

    Price: 37-55 USD

    IGBT module, 15A, 1600V, FP15R12KE3G, Infineon Technologies AG

  • Models: GD16131-GLP
Price: 95-98 USD

    GD16131-GLP

    Price: 95-98 USD

    622 Mbit/s MUX/DeMUX Chip Set, -7 to 0 V, -1.0 to 1.0 mA, 1.3W Power consumption

  • Models: ATMEGA88PA-AU
Price: 1-5 USD

    ATMEGA88PA-AU

    Price: 1-5 USD

    CMOS 8-bit microcontroller, 32-TQFP, 20MHz, 1.8 V ~ 5.5 V, ATMEGA88PA-AU

  • Models: MM74C922N
Price: 2.2-2.7 USD

    MM74C922N

    Price: 2.2-2.7 USD

    key encoder, DIP, 700 mW, 3V to 15V, 50 kΩ, On or off chip clock, Low power consumption, Last key ...

  • Models: 70HFR100
Price: 1-2 USD

    70HFR100

    Price: 1-2 USD

    standard recovery diode, DO-5, 70A, 100 to 1200V, High surge current capability

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All