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Part Number: GS88237AB-250

 

 

 

 

 

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GS88237AB-250 Maximum Ratings

Symbol Description
Value
Unit
VDD Voltage on VDD Pins
0.5 to 4.6
V
VDDQ Voltage in VDDQ Pins
0.5 to 4.6
V
VCK Voltage on Clock Input Pin
0.5 to 6
V
VI/O Voltage on I/O Pins
0.5 to VDDQ +0.5 ( 1.6 V max.)
V
VIN Voltage on Other Input Pins
0.5 to VDD +0.5 ( 1.6 V max.)
V
IIN Input Current on Any Pin
+/20
mA
IOUT Output Current on Any I/O Pin
+/20
mA
PD Package Power Dissipation
1.5
W
TSTG Storage Temperature
55 to 125
TBIAS Temperature Under Bias
55 to 125
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.

GS88237AB-250 Features

• Single/Dual Cycle Deselect selectable
• IEEE 1149.1 JTAG-compatible Boundary Scan
• ZQ mode pin for user-selectable high/low output drive
• 2.5 V or 3.3 V +10%/10% core power supply
• 2.5 V or 3.3 V I/O supply
LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 119-bump BGA package

GS88237AB-250 Typical Application

The GS88237AB is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

GS88237AB-250 datasheet

GS88237AB-250
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