Purchase GS88237AB-250, In-stock GS88237AB-250 From SeekIC.


| Symbol | Description |
Value |
Unit |
| VDD | Voltage on VDD Pins |
0.5 to 4.6 |
V |
| VDDQ | Voltage in VDDQ Pins |
0.5 to 4.6 |
V |
| VCK | Voltage on Clock Input Pin |
0.5 to 6 |
V |
| VI/O | Voltage on I/O Pins |
0.5 to VDDQ +0.5 ( 1.6 V max.) |
V |
| VIN | Voltage on Other Input Pins |
0.5 to VDD +0.5 ( 1.6 V max.) |
V |
| IIN | Input Current on Any Pin |
+/20 |
mA |
| IOUT | Output Current on Any I/O Pin |
+/20 |
mA |
| PD | Package Power Dissipation |
1.5 |
W |
| TSTG | Storage Temperature |
55 to 125 |
|
| TBIAS | Temperature Under Bias |
55 to 125 |
The GS88237AB is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
GS88237AB-250
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