Purchase GS882Z18, In-stock GS882Z18 From SeekIC.
Part Number: GS882Z18
Description: The GS882Z818/36B is an 8Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/d...
- Table of contents:
GS882Z18
-
Suppliers
DataSheet
General Description
GS882Z18 General Description
The GS882Z818/36B is an 8Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.
Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the input clock. Burst order control (LBO ) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable (ZZ) and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off chip write pulse generation required by asynchronous SRAMs and simplifies input signal timing.
GS882Z18 Maximum Ratings
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
| Supply Voltage | VDD | 3.135 | 3.3 | 3.6 | V | |
| I/O Supply Voltage | VDDQ | 2.375 | 2.5 | VDD | V | 1 |
| Input High Voltage | VIH | 1.7 | - | VDD +0.3 | V | 2 |
| Input Low Voltage | VIL | 0.3 | - | 0.8 | V | 2 |
| Ambient Temperature (Commercial Range Versions) | TA | 0 | 25 | 70 | °C | 3 |
| Ambient Temperature (Industrial Range Versions) | TA | 40 | 25 | 85 | °C | 3 |
GS882Z18 Features
• 512K x 18 and 256K x 36 configurations
• User-configurable Pipelined and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait
• Read-Write-Read bus utilization
• Fully pin-compatible with both pipelined and flow through
NtRAM™, NoBL™ and ZBT™ SRAMs
• IEEE 1149.1 JTAG-compatible Boundary Scan
• On-chip write parity checking; even or odd selectable
• ZQ mode pin for user selectable high /low output drive strength.
• x16/x32 mode with on-chip parity encoding and error detection
• Pin-compatible with 2M, 4M and 16M devices
• 3.3 V +10%/5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleave Burst mode
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• Clock Control, registered, address, data, and control
• ZZ Pin for automatic power-down
• JEDEC-standard 119-Bump BGA package
• User-configurable Pipelined and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait
• Read-Write-Read bus utilization
• Fully pin-compatible with both pipelined and flow through
NtRAM™, NoBL™ and ZBT™ SRAMs
• IEEE 1149.1 JTAG-compatible Boundary Scan
• On-chip write parity checking; even or odd selectable
• ZQ mode pin for user selectable high /low output drive strength.
• x16/x32 mode with on-chip parity encoding and error detection
• Pin-compatible with 2M, 4M and 16M devices
• 3.3 V +10%/5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleave Burst mode
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• Clock Control, registered, address, data, and control
• ZZ Pin for automatic power-down
• JEDEC-standard 119-Bump BGA package
GS882Z18AB
PDF/DataSheet Download
- Datasheet: GS882Z18AB
- File Size: 914334 KB
- Manufacturer: GSI [GSI Technology]
- Click here to Download
- ·GS809C
- VISAY [Vishay Siliconix]
- Microprocessor Reset Monitors
- 46098 KB
- ·GS810C
- VISAY [Vishay Siliconix]
- Microprocessor Reset Monitors
- 46098 KB
- ·GS816018
- ETC [ETC]
- 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
- 829559 KB
- ·GS816018BT-150
- GSI [GSI Technology]
- 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
- 947964 KB
- ·GS816018CT-250
- GSI [GSI Technology]
- 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
- 581159 KB
- ·GS816018CT-250I
- GSI [GSI Technology]
- 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
- 581159 KB
- ·GS816018CT-250IT
- GSI [GSI Technology]
- 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
- 581159 KB
- ·GS816018CT-250T
- GSI [GSI Technology]
- 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
- 581159 KB
GS882Z18 Relative Products
GS882V37AD-250
The GS882V37AB/D is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the GS882V37AB/D now finds application in synch...
GS882V37AB-250
The GS882V37AB/D is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the GS882V37AB/D now finds application in synch...
GS882V37AB-225
The GS882V37AB/D is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the GS882V37AB/D now finds application in synch...
GS882V37AB-200
The GS882V37AB/D is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the GS882V37AB/D now finds application in synch...
GS88237BD-xxxV
GS88237BD-333
Hotspot Suppliers Product
AP72T02GH
Price: 0.25-0.95 USD
N-CHANNEL, ENHANCEMENT MODE, POWER MOSFET
QFS25U-100
Price: 14-19 USD
QFS25U-100, fuse, International Rectifier, 100A, 250V
DSP1-DC5V-F
Price: 1.8-2 USD
5A small polarized power relay, DIP, High switching capability, Wide variation, High breakdown vol...
EPM570T144C5N
Price: 3.5-4.5 USD
CPLD, QFP, 2.5μA
SL75J
Price: 10-15 USD
Mobile Intel® Celeron® Processor 2.40 GHz, 256K Cache, 400 MHz
VNH3SP30-E
Price: 6.9-7.8 USD
H-bridge, motor driver , SOP30
C3225C0G1H153JT000N
Price: 0.1-100 USD
ceramic capacitor for mid voltage SMD, 1210, high voltage resistance, 630V
TCSCS1A106MAAR
Price: 0.1-100 USD
Samsung semiconductor, TCSCS1A106MAAR, 10 uF, 4 Ohm, Capacitors, SMD
LQG15HS10NJ02D
Price: 0.1-100 USD
SMD, chip inductor, chip coil, high frequency monolithic type, Self Resonant Freq, 1.7GHz
XPC8260ZUHFBC
Price: 1-100 USD
IC MPU POWERQUICC II 480-TBGA - XPC8260ZUHFBC
TLE4941C
Price: 1.6-3 USD
Sensor IC, PSSO2-1, 200 mA
HIP6301CB-T
Price: 0.1-0.17 USD
multi-phase PWM control IC, +7V, gate drivers, Multi-Phase Power Conversion
