PinoutSpecifications Parameter Symbol Ratings Unit Junction Temperature Tj +125 Storage Temperature Tstg -65 ~ +150 Repetitive Peak Reverse Voltage VRRM 85 V Continuous Reverse Voltage VR 75 V Continuous Forward Current single diode loaded (note1) IF 150 mA...
GSBAW56: PinoutSpecifications Parameter Symbol Ratings Unit Junction Temperature Tj +125 Storage Temperature Tstg -65 ~ +150 Repetitive Peak Reverse Voltage VRRM 85 V Continuou...
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| Parameter | Symbol | Ratings | Unit | |
| Junction Temperature | Tj | +125 | ||
| Storage Temperature | Tstg | -65 ~ +150 | ||
| Repetitive Peak Reverse Voltage | VRRM | 85 | V | |
| Continuous Reverse Voltage | VR | 75 | V | |
| Continuous Forward Current | single diode loaded (note1) | IF | 150 | mA |
| double diode loaded (note1) | 130 | |||
| Repetitive Peak Forward Current | IFRM | 500 | mA | |
| Non-Repetitive Peak Forward Current (1ms) | IFSM | 1 | A | |
| Total Power Dissipation | PD | 250 | mW | |
The GSBAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in a small SOT-323 plastic SMD package.