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Part Number: GSBC858
Description: The GSBC858 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-...
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GSBC858
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General Description
GSBC858 General Description
The GSBC858 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.
GSBC858 Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Junction Temperature | Tj | +150 | |
| Storage Temperature Range | Tstg | -55~+150 | |
| Collector to Base Voltage | VCBO | -30 | V |
| Collector to Emitter Voltage | VCEO | -30 | V |
| Emitter to Base Voltage | VEBO | -5 | V |
| Collect Current | IC | 100 | mA |
| Total Power Dissipation | PD | 225 | mW |
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- · EPCS4SI8
- 226669 KB
- · UTC2411
- 136508 KB
- ·(M5M410092B)
- Mitsubishi
- 3D-RAM
- 1268750 KB
- ·_FCQ30A06
- NIEC [Nihon Inter Electronics Corporation]
- LOW FORWARD VOLTAGE DROP
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- ·0001.2501.PT
- Fuse
- 40400 KB
- ·0001.2501.TR
- Fuse
- 40400 KB
- ·0001.2502.PT
- Fuse
- 40400 KB
- ·0001.2502.TR
- Fuse
- 40400 KB
GSBC858 Relative Products
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GSBC848
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GSBC847
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GSBC846
The GSBC846 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.
GSBC817
The GSBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power utput storages.
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