GSMBD4148

Specifications Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -65 ~ +150 Maximum Peak Reverse Voltage VRM 100 V Maximum Reverse Voltage VR 75 V Average Forward Current IO 200 mA Surge Current(1us) IFSM 2 A Typica...

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SeekIC No. : 004356759 Detail

GSMBD4148: Specifications Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -65 ~ +150 Maximum Peak Reverse Voltage VRM 100 V Maximum Reverse Vo...

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Part Number:
GSMBD4148
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Specifications

Parameter Symbol Ratings Unit
Junction Temperature Tj +150
Storage Temperature Tstg -65 ~ +150
Maximum Peak Reverse Voltage VRM 100 V
Maximum Reverse Voltage VR 75 V
Average Forward Current IO 200 mA
Surge Current(1us) IFSM 2 A
Typical Junction Capacitance between Terminal (Note 1) CJ 4.0 pF
Maximum Reverse Recovery Time (Note2) TRR 4.0 nSec
Total Power Dissipation PD 225 mW



Description

The GSMBD4148 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in plastic surface mount package.




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