Specifications Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -65 ~ +150 Maximum Peak Reverse Voltage VRM 100 V Maximum Reverse Voltage VR 75 V Average Forward Current IO 200 mA Surge Current(1us) IFSM 2 A Typica...
GSMBD4148: Specifications Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -65 ~ +150 Maximum Peak Reverse Voltage VRM 100 V Maximum Reverse Vo...
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Parameter | Symbol | Ratings | Unit |
Junction Temperature | Tj | +150 | |
Storage Temperature | Tstg | -65 ~ +150 | |
Maximum Peak Reverse Voltage | VRM | 100 | V |
Maximum Reverse Voltage | VR | 75 | V |
Average Forward Current | IO | 200 | mA |
Surge Current(1us) | IFSM | 2 | A |
Typical Junction Capacitance between Terminal (Note 1) | CJ | 4.0 | pF |
Maximum Reverse Recovery Time (Note2) | TRR | 4.0 | nSec |
Total Power Dissipation | PD | 225 | mW |
The GSMBD4148 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in plastic surface mount package.