Purchase GT15Q102, In-stock GT15Q102 From SeekIC.
MFG:TOSHIBA Package Cooled:TO-3P
- Table of contents:
GT15Q102
-
Suppliers
DataSheet
General Description
GT15Q102 Maximum Ratings
|
Characteristic |
Symbol |
Rating |
Unit | |
| Collector-emitter voltage Gate-emitter voltage |
VCES VGES |
1200 ± 20 |
V V | |
| Collector current |
DC |
IC |
15 |
A |
|
1ms |
ICP |
30 | ||
| Collector power dissipation (Tc=25) |
PC |
170 |
W | |
| Junction temperature Storage temperature range |
Tj Tstg |
150 55~150 |
| |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and invidual reliability data (i.e. reliability test report and estimated failure rate, etc).
GT15Q102 Typical Application
`Third-generation IGBT
`Enhancement mode type
`High speed: tf = 0.32s (max)
`Low saturation voltage: VCE (sat) = 2.7 V (max)
`Enhancement mode type
`High speed: tf = 0.32s (max)
`Low saturation voltage: VCE (sat) = 2.7 V (max)
GT15Q102
PDF/DataSheet Download
- Datasheet: GT15Q102
- File Size: 155896 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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