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MFG:N/A  Package Cooled:NA/  D/C:09+  

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GT2 Series Datasheet download

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Part Number: GT20J321

 

MFG: N/A

Package Cooled: NA/

D/C: 09+

 

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GT20J321 Maximum Ratings

Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 600 V
Collector to Emitter Voltage VCEO ±20 V
Emitter to Base Voltage VEBO 20 V
Collect Current DC IC 40 A
1 ms ICP 20 A
Emitter-collector forward
current		 DC IF 40 mA
1 ms IFM 40
Collector power
dissipation		 PC

45

 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 ~ +150

GT20J321 Features

• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
   High speed: tf = 0.04 s (typ.)
   Low switching loss : Eon = 0.40 mJ (typ.) : Eoff = 0.43 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector

GT20J321 datasheet

GT20J321
PDF/DataSheet Download

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