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GT20J321

Features: • Fourth-generation IGBT• Enhancement mode type• Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.04 s (typ.) Low switching loss : Eon = 0.40 mJ (typ.) : Eoff = 0.43 mJ (typ.)• Low saturation voltage: VCE (sat) = 2.0 V (typ.)...

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SeekIC No. : 004357003 Detail

GT20J321: Features: • Fourth-generation IGBT• Enhancement mode type• Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.04 s (typ.) Low switching loss : Eon...

GT20J321 Data Sheet

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Part Number:
GT20J321
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
   High speed: tf = 0.04 s (typ.)
   Low switching loss : Eon = 0.40 mJ (typ.) : Eoff = 0.43 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector


Specifications

Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 600 V
Collector to Emitter Voltage VCEO ±20 V
Emitter to Base Voltage VEBO 20 V
Collect Current DC IC 40 A
1 ms ICP 20 A
Emitter-collector forward
current		 DC IF 40 mA
1 ms IFM 40
Collector power
dissipation		 PC

45

 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 ~ +150



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