GT25G101(Q)

IGBT Transistors IGBT 400V 170A

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GT25G101(Q) Picture
SeekIC No. : 00143929 Detail

GT25G101(Q): IGBT Transistors IGBT 400V 170A

floor Price/Ceiling Price

Part Number:
GT25G101(Q)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/27

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 400 V
Maximum Gate Emitter Voltage : 25 V Maximum Operating Temperature : + 150 C
Package / Case : TO-220    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging :
Maximum Operating Temperature : + 150 C
Configuration : Single
Collector- Emitter Voltage VCEO Max : 400 V
Package / Case : TO-220
Maximum Gate Emitter Voltage : 25 V


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