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GT25Q102(Q)

IGBT Transistors IGBT, 1200V, 25A

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SeekIC No. : 00143671 Detail

GT25Q102(Q): IGBT Transistors IGBT, 1200V, 25A

GT25Q102(Q) Data Sheet

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Part Number:
GT25Q102(Q)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description

Configuration :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging :


Parameters:

Technical/Catalog InformationGT25Q102(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)25A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 25A
Power - Max200W
Mounting TypeThrough Hole
Package / Case*
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names GT25Q102 Q
GT25Q102Q



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