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GT25Q301

Features: • Third-generation IGBT• Enhancement mode type• High speed: tf = 0.32 s (max)• Low saturation voltage: VCE (sat) = 2.7 V (max)• FRD included between emitter and collectorSpecifications Characteristics Symbol Rating Unit Collector-emitte...

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GT25Q301: Features: • Third-generation IGBT• Enhancement mode type• High speed: tf = 0.32 s (max)• Low saturation voltage: VCE (sat) = 2.7 V (max)• FRD included between emitter a...

GT25Q301 Data Sheet

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Part Number:
GT25Q301
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Third-generation IGBT
• Enhancement mode type
• High speed: tf = 0.32 s (max)
• Low saturation voltage: VCE (sat) = 2.7 V (max)
• FRD included between emitter and collector


Specifications

Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
1200
V
Gate-emitter voltage
VEBS
±20
V
Collector current
DC
IC
25
A
1 ms
ICP
50
Collector power
dissipation
DC
IF
25

mW
1 ms
IFP
50
Collector power dissipation
(Tc = 25°C)
PC
200
W
Junction temperature
Tj
150
Storage temperature range
Tstg
-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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