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GT25Q301(Q)

IGBT Transistors High Power Motor N Channel IGBT 2.7V

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SeekIC No. : 00142714 Detail

GT25Q301(Q): IGBT Transistors High Power Motor N Channel IGBT 2.7V

GT25Q301(Q) Data Sheet

floor Price/Ceiling Price

US $ 4.6~7.66 / Piece | Get Latest Price
Part Number:
GT25Q301(Q)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $7.66
  • $6.13
  • $5.21
  • $4.6
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Continuous Collector Current at 25 C : 25 A
Maximum Operating Temperature : + 150 C Package / Case : TO-3P
Packaging : Bulk    

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Continuous Collector Current at 25 C : 25 A
Package / Case : TO-3P
Packaging : Bulk


Parameters:

Technical/Catalog InformationGT25Q301(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)25A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 25A
Power - Max200W
Mounting TypeThrough Hole
Package / Case*
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names GT25Q301 Q
GT25Q301Q



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